FURNACE AND RAPID THERMAL ANNEALING FOR POLYSILICON THIN-FILM TRANSISTORS - INFLUENCE OF CHANNEL FILM THICKNESS

被引：5

作者：

BONNEL, M ^{[1
]}

DUHAMEL, N ^{[1
]}

HENRION, T ^{[1
]}

LOISEL, B ^{[1
]}

HAJI, T ^{[1
]}

机构：

[1] UNIV RENNES 1,F-22301 LANNION,FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 12期

关键词：

D O I：

10.1149/1.2221129

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thermal crystallization of amorphous silicon films deposited on glass substrates, using conventional and rapid thermal processing have been investigated for the realization of polycrystalline thin film transistors (TFTs). The films annealed by these two methods exhibit a similar structure. Measurements of the drain current in the off state and the field effect mobility for various channel film thicknesses show that the rapid thermal annealing (RTA) crystallization technique leads to TFTs with an electrical behavior as good as the one obtained by conventional annealing.

引用

页码：3584 / 3587

页数：4

共 7 条

[1]

Liu G., Fonash S.J., Jpn. J. Appl. Phys, 30, 269, (1991)

[2]

Bonnel M., Duhamel N., Guendouz G., Haji L., Loisel B., Ruault P., Jpn. J. Appl. Phys, 30, 1924, (1991)

[3]

Greve D.W., Potyraj P.A., Guzman A.M., Solid State Electronics, 28, 1255, (1985)

[4]

Mahli S.D.S., Shichijo H., Banerjee S.H., Sundaresan R., Elahy M., Pollack G.P., Richardson W., Shah A.H., Hite L.R., Womack R.H., Chatterjee P., Lam H.W., IEEE Trans. Electron Devices, ED-32, 258, (1985)

[5]

Kim D.M., Feng Qian S., Ahmed S., Park H.K., Sachitano J.L., J. Appl. Phys., 60, 2419, (1986)

[6]

Luan S., Neudecki G.W., J. Appl. Phys., 72, 766, (1992)

[7]

Kanicki J., Libsch F.R., Griffith J., Polastre R., J. Appl. Phys., 69, 2339, (1991)

← 1 →