ELECTRONIC-STRUCTURES OF LAYERED C-60 AND C-70 ON SI(100) SURFACE

Two-dimensional band structure calculation is carried out for the c(4 x 3) C60 and perfect triangular C70 lattices by using a mixed-basis approach in which wave functions are expanded with not only plane waves but also the 1s and 2p atomic orbitals of carbon atoms. The effect of the Si(100) substrate is taken into account by simply assuming a charge transfer from Si dimers and a positive charge back-ground. Wave functions of excess charge on these microclusters are analyzed, and the resulting partial charge distributions explain the electron cloud images observed recently with scanning tunneling microscopy (STM).