PROPERTIES OF SILICON P-N JUNCTIONS FORMED BY CS+ IMPLANTATION AT LOW ENERGIES

被引：10

作者：

MEDVED, DB

ROLIK, GP

SPEISER, RC

DALEY, HL

机构：

来源：

关键词：

D O I：

10.1063/1.1753853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：213 / 215

页数：3

共 7 条

[1] FERBER RR, 1963, T IEEE NUCL SCI, V10, P15
[2] KING WJ, 1963, EL DIV ABSTR, V11
[3] MCCALDIN JO, 1963, B AM PHYS SOC, V8, P473
[4] EXPERIMENTAL EVIDENCE FOR INCREASE OF HEAVY ION RANGES BY CHANNELING IN CRYSTALLINE STRUCTURE
PIERCY, GR
MCCARGO, M
BROWN, F
DAVIES, JA
[J]. PHYSICAL REVIEW LETTERS, 1963, 10 (09) : 399 - &
[5] THE CHANNELING OF ENERGETIC ATOMS IN CRYSTAL LATTICES
ROBINSON, MT
OEN, OS
[J]. APPLIED PHYSICS LETTERS, 1963, 2 (02) : 30 - 32
[6] SPEISER RC, 1962, ARS266462 PAP
[7] WOLF M, 1961, AUG PAC GEN M AIEE