DESIGN TECHNIQUES FOR MONOLITHIC OPERATIONAL AMPLIFIERS

被引：31

作者：

WIDLAR, RJ

机构：

[1] National Semiconductor Corporation, Santa Clara

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1969年 / SC 4卷 / 04期

关键词：

D O I：

10.1109/JSSC.1969.1049994

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of recently developed integrated-circuit components will be reviewed and some new devices will be described. Their impact on the design of monolithic operational amplifiers will also be discussed. Emphasis will be placed on realizing particularly good dc characteristics—especially low input current. However, techniques for obtaining higher operating speeds will also be covered. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：184 / &

共 13 条

[1] DOBKIN RC, 1969, FEEDFORWARD COMPENSA
[2] Fullagar D, 1968, NEW HIGH PERFORMANCE
[3] LATERAL COMPLEMENTARY TRANSISTOR STRUCTURE FOR SIMULTANEOUS FABRICATION OF FUNCTIONAL BLOCKS
LIN, HC
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[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1491 - +
[4] THEORY OF LATERAL TRANSISTORS
LINDMAYER, J
SCHNEIDER, W
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 225 - +
[5] MOORE GE, 1963, MICROELECTRONICS, pCH5
[6] Solomon JE, 1969, ISSCC DIGEST TECH PA, V12, P14
[7] TUSZYNSKI A, 1962, SOLID STATE DESIGN, P32
[8] Widlar R. J., 1967, EEE, V15, P58
[9] WIDLAR RJ, 1968, ELECTRONICS, V41, P90
[10] WIDLAR RJ, 1968, EDN, V13, P24

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