OBSERVATION OF HIGH-FIELD DOMAINS IN TYPE INDIUM PHOSPHIDE

被引：17

作者：

BOERS, PM

ACKET, GA

PAXMAN, DH

TREE, RJ

机构：

来源：

ELECTRONICS LETTERS | 1971年 / 7卷 / 01期

关键词：

D O I：

10.1049/el:19710001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1 / &

相关论文

共 9 条

[1] MICROWAVE GENERATION BY INP 3-LEVEL TRANSFERRED-ELECTRON OSCILLATORS
COLLIVER, D
HILSUM, C
JOYCE, BD
MORGAN, JR
REES, HD
KNIGHT, JR
[J]. ELECTRONICS LETTERS, 1970, 6 (14) : 436 - &
[2] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS
GUNN, JB
[J]. SOLID STATE COMMUNICATIONS, 1963, 1 (04) : 88 - 91
[3] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS
GUNN, JB
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &
[4] GUNN JB, 1965, PLASMA EFFECTS SOLID, P199
[5] COHERENT HIGH FIELD OSCILLATIONS IN LONG SAMPLES OF GAAS
HEEKS, JS
WOODE, AD
SANDBANK, CP
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (05): : 554 - &
[6] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE
HILSUM, C
REES, HD
[J]. ELECTRONICS LETTERS, 1970, 6 (09) : 277 - &
[7] INSTABILITIES OF INP 3-LEVEL TRANSFERRED-ELECTRON OSCILLATORS
HILSUM, C
MULLIN, JB
PREW, BA
REES, HD
STRAUGHAN, BW
[J]. ELECTRONICS LETTERS, 1970, 6 (10) : 307 - +
[8] BAND STRUCTURE AND HIGH-FIELD TRANSPORT PROPERTIES OF INP
JAMES, LW
VANDYKE, JP
HERMAN, F
CHANG, DM
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10): : 3998 - +
[9] STIMULATED EMISSION IN FIELD-IONIZED BULK INP
SOUTHGATE, PD
MAZZOCHI, RT
[J]. PHYSICS LETTERS A, 1968, A 28 (03) : 216 - +