SCANNING-TUNNELING-MICROSCOPY OF DOPING AND COMPOSITIONAL III-V HOMOSTRUCTURES AND HETEROSTRUCTURES

被引：27

作者：

GWO, S

CHAO, KJ

SMITH, AR

SHIH, CK

SADRA, K

STREETMAN, BG

机构：

[1] UNIV TEXAS, MICROELECTR RES CTR, AUSTIN, TX 78712 USA

[2] UNIV TEXAS, DEPT ELECT & COMP ENGN, AUSTIN, TX 78712 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.586960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Scanning tunneling microscopy (STM) was used to study the (110) cross-sectional surfaces of molecular-beam epitaxially grown III-V homo- and heterostructures, which include GaAs multiple p-n junctions, (InGa)As/GaAs strained-layer multiple quantum wells, and (AlGa)As/GaAs heterojunctions. Both doping and compositional effects can be resolved by the topographic contrasts of constant-current STM images. The samples were prepared by either cleaving in ultrahigh vacuum or cleaving ex situ followed by sulfide [(NH4)2S] passivation. Sulfide passivated samples have been found to be advantageous for the measurements of scanning tunneling spectroscopy.

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页码：1509 / 1513

页数：5

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