TUNNELING CHARACTERISTICS OF Y1-XPRXBA2CU3O7-Y/PB PLANAR JUNCTIONS

被引：6

作者：

CHEN, HT ^{[1
]}

CHEN, TT ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN

来源：

PHYSICA C | 1993年 / 213卷 / 1-2期

关键词：

D O I：

10.1016/0921-4534(93)90770-Q

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated electron tunneling junctions on thin films of Y1-xPrxBa2Cu3O7-y, with x = 0-0.45, which were grown by laser ablation on (100) MgO substrates. The tunneling characteristics of the YBCO/Pb and YPBCO/Pb planar junctions were measured. They all exhibited Pb energy gap and phonon structures as well as the gap-like structure of YBCO at 4.2 K. However, no gap-like structure of YPBCO was observed with high Pr concentration. The differential conductance of YPBCO films changes discontinuously both in shape and in value at T(c). A tunneling model is proposed.

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页码：151 / 156

页数：6

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