HIGH REFLECTIVITY 1.55 MU-M (AL)GASB/ALSB BRAGG MIRROR GROWN BY MOLECULAR-BEAM EPITAXY

被引：17

作者：

LAMBERT, B

TOUDIC, Y

ROUILLARD, Y

BAUDET, M

GUENAIS, B

DEVEAUD, B

VALIENTE, I

SIMON, JC

机构：

[1] France Telecom, CNET/LAB/OCM, 22301 Lannion, Route de Trégastel

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.111035

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the molecular beam epitaxy growth of (Al)GaSb/AlSb Bragg mirrors around the 1.55 mu m wavelength region. Mirrors with 97% reflectivity have been achieved by using 10 pairs of (Al)GaSb (1048 Angstrom) and AlSb (1207 Angstrom) quarter wavelength layers. This demonstrates the capability of the antimonide system to obtain efficient Bragg mirrors grown on GaAs substrates.

引用

收藏

页码：690 / 691

页数：2

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