EFFECT OF PRIMARY IONIZATION IN AMORPHOUS-SILICON DETECTORS

[1] CABARROCAS PR, 1987, 7TH P PHOT SOL EN C, P533

[2] EXTENSION OF RAMOS THEOREM AS APPLIED TO INDUCED CHARGE IN SEMICONDUCTOR DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (01): : 137 - +

[3] CHERN J, 1985, TI ENG J NOV

[4] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[5] CURTINS H, 1987, UNPUB WORKSHOP SILAN

[6] STUDY OF SURFACE-INTERFACE AND BULK DEFECT DENSITY IN A-SI-H BY MEANS OF PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND PHOTOCONDUCTIVITY [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 731 - 734

[7] FIEBIGER JR, 1971, J APPL PHYS, V43, P3202

[8] DETECTION OF CHARGED-PARTICLES IN AMORPHOUS-SILICON LAYERS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (01) : 351 - 354

[9] KAPLAN SN, 1987, LONDON C POSITION SE

[10] KLEIDER JP, 1987, THESIS PARIS

[1] CABARROCAS PR, 1987, 7TH P PHOT SOL EN C, P533

[2] EXTENSION OF RAMOS THEOREM AS APPLIED TO INDUCED CHARGE IN SEMICONDUCTOR DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (01): : 137 - +

[3] CHERN J, 1985, TI ENG J NOV

[4] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[5] CURTINS H, 1987, UNPUB WORKSHOP SILAN

[6] STUDY OF SURFACE-INTERFACE AND BULK DEFECT DENSITY IN A-SI-H BY MEANS OF PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND PHOTOCONDUCTIVITY [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 731 - 734

[7] FIEBIGER JR, 1971, J APPL PHYS, V43, P3202

[8] DETECTION OF CHARGED-PARTICLES IN AMORPHOUS-SILICON LAYERS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (01) : 351 - 354

[9] KAPLAN SN, 1987, LONDON C POSITION SE

[10] KLEIDER JP, 1987, THESIS PARIS