DRIFT MOBILITY AND HALL-COEFFICIENT FACTOR OF HOLES IN GERMANIUM AND SILICON

被引：23

作者：

NAKAGAWA, H ^{[1
]}

ZUKOTYNSKI, S ^{[1
]}

机构：

[1] UNIV TORONTO,CTR MAT RES,TORONTO M5S 1A4,ONTARIO,CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1978年 / 56卷 / 03期

关键词：

D O I：

10.1139/p78-046

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：364 / 372

页数：9

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