EQUIVALENT CIRCUIT MODEL IN SOLID-STATE ELECTRONICS .3. CONDUCTION AND DISPLACEMENT CURRENTS

被引：93

作者：

SAH, CT

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 12期

关键词：

D O I：

10.1016/0038-1101(70)90035-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1547 / +

页数：1

共 15 条

[1] APPLICATION OF DISTRIBUTED EQUILIBRIUM EQUIVALENT CIRCUIT MODEL TO SEMICONDUCTOR JUNCTIONS [J].

FORBES, L ;

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (12) :1036-+

[2] LUMPED MODEL ANALYSIS OF LOW FREQUENCY GENERATION NOISE IN GOLD-DOPED SILICON JUNCTION-GATE FIELD-EFFECT TRANSISTORS [J].

FU, HS ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1969, 12 (08) :605-+

[3] A HIGH-FREQUENCY DIFFUSED BASE GERMANIUM TRANSISTOR [J].

LEE, CA .

BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (01) :23-34

[4] ALPHA-CUTOFF FREQUENCY OF JUNCTION TRANSISTORS [J].

LINDMAYER, J ;

WRIGLEY, C .

SOLID-STATE ELECTRONICS, 1961, 2 (04) :247-258

[5]

LINVILL J, 1961, TRANSISTORS ACTIVE C

[6]

Pierret R. F., 1970, Solid-State Electronics, V13, P289, DOI 10.1016/0038-1101(70)90180-2

[7]

Pierret R. F., 1970, Solid-State Electronics, V13, P269, DOI 10.1016/0038-1101(70)90179-6

[8] EXACT ANALYTICAL SOLUTION OF HIGH FREQUENCY LOSSLESS MOS CAPACITANCE-VOLTAGE CHARACTERISTICS AND VALIDITY OF CHARGE ANALYSIS [J].

SAH, CT ;

PIERRET, RF ;

TOLE, AB .

SOLID-STATE ELECTRONICS, 1969, 12 (09) :681-+

[9]

SAH CT, 1967, PR INST ELECTR ELECT, V55, P654

[10]

SAH CT, 1967, PR INST ELECTR ELECT, V55, P672

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