3-DIMENSIONAL NUCLEATION AND GROWTH UNDER CONTROLLED POTENTIAL

被引：150

作者：

MIRKIN, MV ^{[1
]}

NILOV, AP ^{[1
]}

机构：

[1] KAZAKH STATE UNIV, DEPT CHEM, ALMA ATA 480012, KAZAKHSTAN, USSR

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1990年 / 283卷 / 1-2期

关键词：

D O I：

10.1016/0022-0728(90)87377-V

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A model is proposed for three-dimensional nucleation/growth. It comprises the following stages: ion diffusion to hemispherical nuclei, quasi-reversible charge transfer, and arrangement of the adatoms into a crystal lattice. A solution to the diffusion problem in the form of integral equations has been obtained. These equations can be used to calculate the current response for an arbitrary dependence of the applied potential on time. The assumption of planar diffusion zones for the calculation of the overlap of growing nuclei diffusion fields has been generalized and improved. The calculated cyclic voltammograms and potentiostatic transients are compared with the results of previous publications. © 1990.

引用

页码：35 / 51

页数：17

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