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ANALYSIS OF GAAS BY DIFFERENT ION-BEAM METHODS

被引：9
作者：
BETHGE, K
MADER, A
MEYER, JD
机构：
[1] Institut für Kernphysik, University of Frankfurt, Frankfurt
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 56-7卷 / pt 2期
关键词：
D O I：
10.1016/0168-583X(91)95033-A
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Impurities in GaAs have been determined using different nuclear particle reactions. Particular interest is focussed on the carbon content because carbon affects the electrical behavior, if incorporated in the lattice, whereas the role of interstitial carbon is not fully explored. The lattice position of carbon was measured by channeled RBS and NRA using the C-12(d, p)C-13 reaction. Similar measurements on implanted carbon show different positioning in the lattice after tempering, indicating a mobility of the carbon atoms. Various surface contaminations have been observed after tempering under different gases.
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收藏
页码：806 / 808
页数：3
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