P2S5 PASSIVATION OF GAAS-SURFACES FOR SCANNING TUNNELING MICROSCOPY IN AIR

被引:59
作者
DAGATA, JA
TSENG, W
BENNETT, J
SCHNEIR, J
HARARY, HH
机构
关键词
D O I
10.1063/1.105708
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report a novel method of GaAs substrate preparation which imparts significantly improved topographical and chemical uniformity to the surface. The procedure, employing an aqueous P2S5/(NH4)2S solution, leaves the surface in a highly ordered state and resistant to air oxidation for periods of a day or more without the presence of foreign chemical layer such as sulfur. Surface quality was determined by scanning tunneling microscopy (STM), time-of-flight secondary ion mass spectrometry, reflection high-energy electron diffraction, and x-ray photoelectron spectroscopy. The remarkable stability and smoothness of treated III-V surfaces is illustrated by STM imaging of an Al0.51GaO.49As/GaAs superlattice in air. The superlattice consisted of periodic alternating AlGaAs/GaAs layers of various thicknesses from 10 to 1000 nm.
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页码:3288 / 3290
页数:3
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