X-RAY-DIAGNOSTICS OF 2D STRAIN PROFILES IN SEMICONDUCTOR CRYSTALS

被引：7

作者：

ARISTOV, V

KUZNETSOV, S

NIKULIN, A

SNIGIREV, A

机构：

[1] Inst. of Mictroelectron. Technol. and High Purity Mater., Acad. of Sci., Moscow

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 1A期

关键词：

D O I：

10.1088/0268-1242/7/1A/032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical model of x-ray spectrum formation in the triple-crystal diffraction technique for the description of interference phenomena of x-ray scattering in crystals is presented. The proposed numerical algorithm of the solution of the corresponding inverse problems enables one to obtain a detailed two-dimensional strain distribution in the specimen crystal from the data of triple-crystal diffractometry.

引用

页码：A168 / A170

页数：3

共 6 条

[1] DYNAMICAL THEORY OF X-RAY DIFFRACTION IN CRYSTALS WITH DEFECTS [J].