HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY STUDY ON SIC GROWN FROM SIO AND C-ASTERISK - CRYSTAL-GROWTH AND STRUCTURAL CHARACTERIZATION

The results of a high resolution transmission electron microscopy study on the growth of the catalytic support silicon carbide, obtained by reacting active carbon with silicon monoxide, are presented. On the basis of this study, it is concluded that the reaction results first in the formation of microareas of SiC randomly distributed where the carbon has been converted into carbide. The growth was found to he preferentially favourable along the [111] direction of a fcc crystal structure resulting in the formation of plates parallel to a {110}-type plane. The stacking of the Si-C elementary layers along [111] is random, which enhances the probability of occurrence of stacking faults and twins. These defects were the most striking feature in the carbide obtained. Heavily faulted 3C-SiC or one-dimensionally disordered SiC polytype was obtained.