DEVELOPMENT OF A PH-SENSITIVE ISFET SUITABLE FOR FABRICATION IN A VOLUME PRODUCTION ENVIRONMENT

被引：8

作者：

GARDE, A

ALDERMAN, J

LANE, W

机构：

[1] National Microelectronics Research Centre, University College, Cork

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1995年 / 27卷 / 1-3期

关键词：

ISFET; PH-SENSITIVITY;

D O I：

10.1016/0925-4005(94)01614-N

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Silicon nitride (Si3N4) is used extensively as the pH-sensitive surface in ion-sensitive field-effect transistors (ISFETs). However, in order for it to exhibit a Nernstian pH response, a treatment in hydrofluoric acid (HF) is often required immediately prior to use. This article describes a method of increasing the pH sensitivity of Si3N4 by using rapid thermal processing (RTP) techniques. Our investigations show that this is a very controlled method of surface modification. It does not interfere with standard processing techniques and most importantly it eliminates the need for a HF treatment. Thus, it is concluded that RTP of Si3N4 is very suitable for use in a volume production environment and is potentially an effective method of controlling the Si3N4 surface in ISFETs.

引用

页码：341 / 344

页数：4

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