OPTICAL CHARACTERIZATION OF ELECTROCHEMICALLY GROWN ANODIC OXIDE ON HG0.85ZN0.15TE

Electrochemically grown anodic oxides on Hg0.85Zn0.15Te are characterized by spectroscopic ellipsometry. The use of a simple model dielectric function gives the best extraction of parameters defining the dielectric response of the oxides with three onsets of electronic transitions. At least two molecular compounds constitute the anodic oxide; their relative ratio varies monotonically with the layer thickness. One of the constituents is more soluble in the anodization solution than the other. Comparison of these results with those obtained on anodic oxide grown on HgCdTe and the consideration of the Zn-Hg-Te-O phase diagram leads us to propose ZnTeO3 and HgTeO3 as the major constituents of the anodic oxide on HgZnTe.