LARGE-STRAIN DEPENDENCE OF ACCEPTOR BINDING ENERGY IN GERMANIUM

[1] ADAMS ED, UNPUBLISHED

[2] DEXTER RN, PRIVATE COMMUNICATIO

[3] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[4] ELASTIC CONSTANTS OF GERMANIUM BETWEEN 1.7-DEGREES K AND 80-DEGREES-K [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (07) : 862 - 863

[5] IONIZATION ENERGIES OF GROUP-III AND GROUP-V ELEMENTS IN GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (04): : 1085 - 1086

[6] VALENCE BAND PARAMETERS IN SILICON FROM CYCLOTRON RESONANCES IN CRYSTALS SUBJECTED TO UNIAXIAL STRESS [J]. PHYSICAL REVIEW LETTERS, 1960, 5 (07) : 307 - 309

[7] HENSEL JC, TO BE PUBLISHED

[8] HENSEL JC, PRIVATE COMMUNICATIO

[9] ILINA MA, 1962, SOV PHYS JETP-USSR, V14, P61

[10] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99

[1] ADAMS ED, UNPUBLISHED

[2] DEXTER RN, PRIVATE COMMUNICATIO

[3] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[4] ELASTIC CONSTANTS OF GERMANIUM BETWEEN 1.7-DEGREES K AND 80-DEGREES-K [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (07) : 862 - 863

[5] IONIZATION ENERGIES OF GROUP-III AND GROUP-V ELEMENTS IN GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (04): : 1085 - 1086

[6] VALENCE BAND PARAMETERS IN SILICON FROM CYCLOTRON RESONANCES IN CRYSTALS SUBJECTED TO UNIAXIAL STRESS [J]. PHYSICAL REVIEW LETTERS, 1960, 5 (07) : 307 - 309

[7] HENSEL JC, TO BE PUBLISHED

[8] HENSEL JC, PRIVATE COMMUNICATIO

[9] ILINA MA, 1962, SOV PHYS JETP-USSR, V14, P61

[10] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99