LATERAL QUANTIZATION INDUCED EMISSION ENERGY SHIFT OF BURIED GAAS/ALGAAS QUANTUM WIRES

被引：33

作者：

MAILE, BE ^{[1
]}

FORCHEL, A ^{[1
]}

GERMANN, R ^{[1
]}

STRAKA, J ^{[1
]}

KORTE, L ^{[1
]}

THANNER, C ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,W-8000 MUNICH 83,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.103427

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Buried GaAs/AlGaAs quantum wires were prepared by Al0.2Ga 0.8As overgrowth of deep etched wires defined by high-resolution electron beam lithography and dry etching. The overgrown wires show a dramatic decrease of the optically inactive sidewall layer compared to open wires. For wires with a lateral dimension Lx=50 nm we observe a spectral shift to higher energies of the excitonic emission, in good agreement with calculations of the two-dimensional confinement effects.

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页码：807 / 809

页数：3

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