EFFECTS OF OXYGEN PARTIAL PRESSURE ON THE OXIDATION OF SILICON CARBIDE

[1] OXIDATION OF OXYGEN-FREE HIGH CONDUCTIVITY COPPER TO CU2O [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (05) : 273 - 281

[2] THE OXIDATION OF SILICON AT HIGH TEMPERATURES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1951, 73 (07) : 3497 - 3499

[3] CHALMERS B, 1953, PROGR METAL PHYSICS, V4, P97

[4] DYNAMIC MECHANISM OF HETEROGENEOUS CATALYSIS [J]. INDUSTRIAL AND ENGINEERING CHEMISTRY, 1953, 45 (07): : 1456 - 1461

[5] ELMER TH, 1951, NEPA1768 DIV REP

[6] ENGELL HJ, 1952, METALL, V6, P285

[7] OXIDATION BEHAVIOR OF SILICON CARBIDE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1958, 41 (09) : 347 - 352

[8] ADSORPTION KINETICS .1. THE SYSTEM OF ALKALI ATOMS ON TUNGSTEN [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1955, 77 (19) : 4969 - 4975

[9] OXIDATION OF SILICON CARBIDE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1959, 42 (12) : 613 - 616

[10] LAMBERTSON WA, UNPUB OXIDATION SILI

[1] OXIDATION OF OXYGEN-FREE HIGH CONDUCTIVITY COPPER TO CU2O [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (05) : 273 - 281

[2] THE OXIDATION OF SILICON AT HIGH TEMPERATURES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1951, 73 (07) : 3497 - 3499

[3] CHALMERS B, 1953, PROGR METAL PHYSICS, V4, P97

[4] DYNAMIC MECHANISM OF HETEROGENEOUS CATALYSIS [J]. INDUSTRIAL AND ENGINEERING CHEMISTRY, 1953, 45 (07): : 1456 - 1461

[5] ELMER TH, 1951, NEPA1768 DIV REP

[6] ENGELL HJ, 1952, METALL, V6, P285

[7] OXIDATION BEHAVIOR OF SILICON CARBIDE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1958, 41 (09) : 347 - 352

[8] ADSORPTION KINETICS .1. THE SYSTEM OF ALKALI ATOMS ON TUNGSTEN [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1955, 77 (19) : 4969 - 4975

[9] OXIDATION OF SILICON CARBIDE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1959, 42 (12) : 613 - 616

[10] LAMBERTSON WA, UNPUB OXIDATION SILI