RATE OF CHEMICAL VAPOR-DEPOSITION OF TIC

被引：21

作者：

STJERNBERG, KG

GASS, H

HINTERMANN, HE

机构：

[1] SANDVIK AB,COROMANT RES CTR,S-12612 STOCKHOLM 42,SWEDEN

[2] LAB SUISSE RECH HORLOGERES,CH-2000 NEUCHATEL,SWITZERLAND

来源：

关键词：

D O I：

10.1016/0040-6090(77)90105-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：81 / 88

页数：8

共 9 条

[1]

BENSON SW, 1960, FOUNDATIONS CHEMICAL, P616

[2]

BRECHER LE, 1970, 2ND P INT C CHEM VAP, P37

[3]

CARLTON HE, 1970, 2ND P INT C CHEM VAP, P209

DUCARROIR, M ;

JAYMES, M ;

BERNARD, C ;

DENIEL, Y .

JOURNAL OF THE LESS-COMMON METALS, 1975, 40 (02) :173-183

[5]

HINTERMANN HE, 1973, 4 INT C CHEM VAP DEP, P107

[6]

LINDSTROM JN, 1973, 4TH P INT C CVD, P115

[7]

NICKL JJ, 1972, 3RD P INT C CVD, P369

[8] PARTIAL-PRESSURE OF TICL4 IN CVD OF TIN [J].

PETERSON, JR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (04) :715-718

[9]

Stull DR, 1971, JANAF THERMOCHEMICAL, V37