DC CHARACTERISTICS OF SILICON AND GERMANIUM POINT CONTACT CRYSTAL RECTIFIERS .2. THE MULTICONTACT THEORY

被引:39
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JOHNSON, VA
SMITH, RN
YEARIAN, HJ
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D O I
10.1063/1.1699654
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O59 [应用物理学];
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页码:283 / 289
页数:7
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共 8 条
[1]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[2]  
COURANT E, 1943, NDRC CORNELL U REPOR
[3]  
COURANT ED, 1946, PHYS REV, V69, P684
[4]   CONTACT POTENTIAL DIFFERENCE IN SILICON CRYSTAL RECTIFIERS [J].
MEYERHOF, WE .
PHYSICAL REVIEW, 1947, 71 (10) :727-735
[5]  
SACHS RG, 1946, PHYS REV, V69, P682
[6]  
SACHS RG, 1943, NDRC168 PURD U REP
[7]  
WEISSKOPF VF, 1943, 133 RAD LAB REP