ORDER-DISORDER TRANSITION IN SINGLE-CRYSTAL SILICON INDUCED BY PULSED UV LASER IRRADIATION

被引：101

作者：

TSU, R

HODGSON, RT

TAN, TY

BAGLIN, JE

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 42卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.42.1356

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Single-crystal silicon samples have been made disordered by irradiation with pulses from a frequency-quadrupled neodynium-doped-yttrium-aluminum-garnet laser with 10-8-s pulse length. We have studied the resulting amorphous layer by transmission electron microscopy and He-ion backscattering. Irradiation with longer-wavelength pulses restored the disordered layer to its original crystalline state. This order-disorder laser-radiation-induced transition is repeatable. © 1979 The American Physical Society.

引用

页码：1356 / 1358

页数：3