ORDER-DISORDER TRANSITION IN SINGLE-CRYSTAL SILICON INDUCED BY PULSED UV LASER IRRADIATION

被引:101
作者
TSU, R
HODGSON, RT
TAN, TY
BAGLIN, JE
机构
[1] IBM Thomas J. Watson Research Center, Yorktown Heights
关键词
D O I
10.1103/PhysRevLett.42.1356
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Single-crystal silicon samples have been made disordered by irradiation with pulses from a frequency-quadrupled neodynium-doped-yttrium-aluminum-garnet laser with 10-8-s pulse length. We have studied the resulting amorphous layer by transmission electron microscopy and He-ion backscattering. Irradiation with longer-wavelength pulses restored the disordered layer to its original crystalline state. This order-disorder laser-radiation-induced transition is repeatable. © 1979 The American Physical Society.
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页码:1356 / 1358
页数:3
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