ROOM-TEMPERATURE CW OPERATION OF INP-INGAASP-INP DOUBLE HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.55 MU-M

被引：45

作者：

KAWAGUCHI, H

TAKAHEI, K

TOYOSHIMA, Y

NAGAI, H

IWANE, G

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph & Telephone Public Corporation, Musashino-shi, Tokyo

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 21期

关键词：

Semiconductor junction lasers;

D O I：

10.1049/el:19790475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature c.w. operation has been achieved for stripe-geometry double heterostructure InP/InGaAsP/InP diode lasers emitting at 1.55 µm. The heterostructures were grown by l.p.e. on (100) InP substrates, and stripes were defined by the conventional planar-stripe structure. The room-temperature (20°C) c.w. threshold current was ≃ 250 mA for a 6 µm wide by 200 µm long cavity. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：669 / 670

页数：2

共 5 条

[1] CONDITIONS OF LPE GROWTH FOR LATTICE MATCHED GAINASP-INP DH LASERS WITH (100) SUBSTRATE IN RANGE OF 1.2-1.5-MU-M
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ITAYA, Y
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KATAYAMA, S
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[2] IMOTO N, 1979, ELECTR COMMUN LAB TE, V20, P963
[3] 1.5 MU-M INGAASP-INP DH LASER WITH OPTICAL-WAVEGUIDE STRUCTURE
KOBAYASHI, N
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (05) : 1005 - 1006
[4] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M
MIYA, T
TERUNUMA, Y
HOSAKA, T
MIYASHITA, T
[J]. ELECTRONICS LETTERS, 1979, 15 (04) : 106 - 108
[5] INP-GAXIN1-XASYP1-Y DOUBLE HETEROSTRUCTURE FOR 1.5 MUM WAVELENGTH
NAGAI, H
NOGUCHI, Y
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (04) : 234 - 236

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