共 9 条
[1]
PULSE HEIGHT DEFECT FOR A L27 AND MG24 IONS IN SILICON SURFACE BARRIER DETECTORS
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NUCLEAR INSTRUMENTS & METHODS,
1965, 34 (03)
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[3]
MEASUREMENT OF THE MEAN DEUTERON INTERACTION ENERGY IN THE H-3(D,N)HE-4 REACTION
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NUCLEAR INSTRUMENTS & METHODS,
1979, 159 (2-3)
:401-406
[4]
SEMICONDUCTOR DETECTOR AS A FAST NEUTRON SPECTROMETER
[J].
NUCLEAR INSTRUMENTS & METHODS,
1967, 48 (01)
:13-&
[5]
NEUTRON INDUCED REACTIONS IN SILICON SEMICONDUCTOR DETECTORS
[J].
NUCLEAR INSTRUMENTS & METHODS,
1971, 94 (03)
:497-+
[6]
IONIZATION DEFECTS OF ENERGETIC 28AL ATOMS IN SILICON
[J].
NUCLEAR INSTRUMENTS & METHODS,
1966, 39 (02)
:347-+
[7]
(N,ALPHA) AND (N,P) REACTIONS IN SILICON AND (N,P) REACTION IN ALUMINUM AT ENERGIES UP TO 5.6 MEV
[J].
JOURNAL OF NUCLEAR ENERGY,
1972, 26 (01)
:1-+
[9]
SATTLER AR, 1965, PHYS REV, V138, P1815