IMPURITY PROFILE MEASUREMENTS OF THIN EPITAXIAL SILICON WAFER BY MULTILAYER SPREADING RESISTANCE ANALYSIS

被引：7

作者：

LIDA, Y

ABE, H

KONDO, M

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI 213,JAPAN

[2] NIPPON ELECT CO LTD,DIV SEMICOND,KAWASAKI 211,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 07期

关键词：

D O I：

10.1149/1.2133493

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1118 / 1122

页数：5

共 14 条

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[3]

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[4] ION-IMPLANTED PROFILES FROM 2 POINT SPREADING RESISTANCE MEASUREMENTS [J].

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[5] CALCULATION OF SPREADING RESISTANCE CORRECTION FACTORS [J].

HU, SM .

SOLID-STATE ELECTRONICS, 1972, 15 (07) :809-&

[6] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

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[7]

KONDO M, 1976, ANNUAL M TOKYO I ELE, P2

[8]

LEE GA, 1974, NBS40010 SPEC PUBL, P75

[9] RESISTANCE OF AN INFINITE SLAB WITH A DISK ELECTRODE AS A MIXED BOUNDARY-VALUE PROBLEM [J].

LEONG, MS ;

CHOO, SC ;

TAY, KH .

SOLID-STATE ELECTRONICS, 1976, 19 (05) :397-401

[10]

MAYER A, 1974, NBS40010 SPEC PUBL, P123

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