ACCELERATOR MASS-SPECTROMETRY SOLUTIONS TO SEMICONDUCTOR PROBLEMS

被引：15

作者：

ANTHONY, JM ^{[1
]}

DONAHUE, DJ ^{[1
]}

机构：

[1] UNIV ARIZONA,DEPT PHYS,TUCSON,AZ 85721

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 29卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(87)90208-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：77 / 82

页数：6

共 8 条

[1] DETECTION OF SEMICONDUCTOR DOPANTS USING ACCELERATOR MASS-SPECTROMETRY [J].

ANTHONY, JM ;

DONAHUE, DJ ;

JULL, AJT ;

ZABEL, TH .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 10-1 (MAY) :498-500

[2]

ANTHONY JM, 1986, MRS S P, V69, P311

[3]

BENNINGHOVEN A, 1986, SECONDARY ION MASS S

[4] ANALYSIS OF CAUSES OF PULSE-HEIGHT DEFECT AND ITS MASS DEPENDENCE FOR HEAVY-ION SILICON DETECTORS [J].

FINCH, EC .

NUCLEAR INSTRUMENTS & METHODS, 1973, 113 (01) :41-49

[5] INSTRUMENTAL NEUTRON-ACTIVATION ANALYSIS OF PROCESSED SILICON [J].

KEENAN, JA ;

GNADE, BE ;

WHITE, JB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) :2232-2236

[6]

SLODZIAN G, 1964, ANN PHYS-PARIS, V9, P591

[7] PULSE-HEIGHT DEFECTS FOR HEAVY IONS IN A SILICON SURFACE-BARRIER DETECTOR [J].

WILKINS, BD ;

FLUSS, MJ ;

KAUFMAN, SB ;

GROSS, CE ;

STEINBERG, EP .

NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (03) :381-+

[8]

Wittkower A. B., 1973, Atomic Data, V5, P113, DOI 10.1016/S0092-640X(73)80001-4

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