GROWTH OF CRYSTALLINE SLABS OF LAYERED INSE BY CZOCHRALSKI METHOD

被引：19

作者：

CHEVY, A

GOUSKOV, A

BESSON, JM

机构：

[1] UNIV MONTPELLIER 2, CNRS LAB, CTR ETUDES ELECTR SOLIDES, F-34060 MONTPELLIER, FRANCE

[2] UNIV PARIS 06, CNRS, PHYS SOLIDES LAB, F-75230 PARIS 05, FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 43卷 / 06期

关键词：

D O I：

10.1016/0022-0248(78)90157-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：756 / 759

页数：4

共 11 条

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[3] DISLOCATION ETCHING OF GASE SINGLE CRYSTALS [J].

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[4]

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[7] PHOTOVOLTAIC PROPERTIES OF GASE AND INSE JUNCTIONS [J].

SEGURA, A ;

BESSON, JM ;

CHEVY, A ;

MARTIN, MS .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 38 (02) :345-351

[8]

SEGURA A, 1977, THESIS U P M CURIE

[9]

TREGOLD RH, 1970, PHYS STATUS SOLIDI A, V3, P407

[10] SURFACE PROPERTIES OF GALLIUM MONOCHALCOGENIDES [J].

WILLIAMS, RH ;

MCEVOY, AJ .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01) :277-+

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