X-RAY TOTAL-EXTERNAL-REFLECTION-BRAGG DIFFRACTION - STRUCTURAL STUDY OF THE GAAS-AL INTERFACE

被引：494

作者：

MARRA, WC

EISENBERGER, P

CHO, AY

机构：

[1] Bell Laboratories, Murray Hill

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 11期

关键词：

D O I：

10.1063/1.325845

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new technique utilizing conventional x-ray diffraction in conjunction with total external reflection has provided a powerful tool for studying ordered interfaces and surface phenomena. It has been used in this work to study the details of the interface region of a molecular beam epitaxially grown Al single crystal on a molecular beam epitaxially grown GaAs single-crystal substrate. A simple model including variations of the lattice parameter and disorder in the interface region is in agreement with these experimental results.

引用

页码：6927 / 6933

页数：7

共 6 条

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[2]

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[6]

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