THE GROWTH-KINETICS OF HE-3 CRYSTALS

被引：12

作者：

GRANER, F ^{[1
]}

BOWLEY, RM ^{[1
]}

NOZIERES, P ^{[1
]}

机构：

[1] INST MAX VON LAUE PAUL LANGEVIN,F-38042 GRENOBLE,FRANCE

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 1990年 / 80卷 / 3-4期

关键词：

D O I：

10.1007/BF00683480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Near the minimum of the3He melting curve, the dynamics of the liquid-solid interface is limited by surface dissipation instead of bulk diffusion of latent heat. Three dissipative coefficients characterize the intrinsic properties of the interface: the mobility k, the Kapitza resistance Rk,and the latent heat sharing coefficient λ. These parameters are studied at T=0.32 kelvins, and at 29.3 bar, and the theoretical predictions are compared to recent measurements. © 1990 Plenum Publishing Corporation.

引用

页码：113 / 133

页数：21

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