UV PHOTON-INDUCED ABSORPTION IN MULTILAYER DIELECTRIC MIRRORS

被引：1

作者：

BAKSHI, MH ^{[1
]}

CECERE, MA ^{[1
]}

DEACON, DAG ^{[1
]}

FAUCHET, AM ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB,NSLS,UPTON,NY 11973

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 296卷 / 1-3期

关键词：

D O I：

10.1016/0168-9002(90)91287-L

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have begun measurements of UV-induced absorption in optical materials using an in situ testing system we have constructed. Samples are exposed in a vacuum system to the intense, tunable photon beam produced by the TOK undulator mounted on the NSLS VUV ring. The absorption of the samples is measured in the visible spectral region during the exposure. We present our results concerning the dependence of the induced absorption on the photon energy and flux. Using a differentially pumped isolation line, we can also modify the residual-gas environment around the samples during exposure to study the deposition of carbonaceous films. We describe our measurement of the carbon film growth caused by UV interaction with CO gas. © 1990.

引用

页码：677 / 683

页数：7

共 22 条

[1] PRELIMINARY-RESULTS ON DIELECTRIC MIRROR DAMAGE DUE TO THE RADIATION OF A HIGH-K UNDULATOR [J].