ELECTRICAL-PROPERTIES OF INDIVIDAUL ZINC-OXIDE GRAIN-BOUNDARIES DETERMINED BY SPATIALLY RESOLVED TUNNELING SPECTROSCOPY

被引:14
作者
ROHRER, GS [1 ]
BONNELL, DA [1 ]
机构
[1] UNIV PENN,DEPT MAT SCI & ENGN,PHILADELPHIA,PA 19104
关键词
grain boundaries; scanning tunneling microscopy; tunneling; varistors; zinc oxide;
D O I
10.1111/j.1151-2916.1990.tb06711.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Scanning tunneling microscopy (STM) and spatially resolved tunneling spectroscopy (TS) were used to observe correlations between the geometric structure and electrical properties of polycrystalline ZnO surfaces under ultrahigh vacuum. Constant current images revealed crystallographic features at a range of length scales, including facets which are hundreds of nanometers long and monoatomic steps ≅0.5 nm (≅5 Å) in height. Tunneling spectroscopy was used to identify individual ZnO grains, grain boundaries, and surface impurities. Areas of reduced conductivity which extend 5 to 40 nm (50 to 400 Å) on either side of the grain boundaries are attributed to associated space charge regions. This paper demonstrates that, when used together, STM and TS are powerful techniques for the study of the structure and electrical properties of single interfaces and grain boundaries. Copyright © 1990, Wiley Blackwell. All rights reserved
引用
收藏
页码:3026 / 3032
页数:7
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