ELECTRON-BEAM WRITING IN THIN-FILMS OF HIGHLY CONDUCTING SOLID ELECTROLYTES RBAG4I5 AND CSAG4BR3-XI2+X

被引：6

作者：

NIKOLAICHIK, VI

DESPOTULI, AL

机构：

[1] Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka 2Moscow District

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1993年 / 67卷 / 01期

关键词：

D O I：

10.1080/09500839308240486

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structures of thin films of RbAg4I5 and CsAg4Br3-xI2+x, vacuum deposited on thin carbon supports, were investigated in a scanning transmission electron microscope. It has been found that a phase with a high ionic conductivity (solid electrolyte) formed in annealed films is very sensitive to electron irradiation. The use of a focused electron beam is demonstrated to produce directly features in films of the solid electrolytes.

引用

页码：19 / 24

页数：6

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