EFFECTIVE HAMILTONIANS AND BINDING-ENERGIES OF WANNIER EXCITONS IN POLAR SEMICONDUCTORS

被引:160
作者
POLLMANN, J
BUTTNER, H
机构
[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[3] UNIV BAYREUTH,INST PHYS,D-8580 BAYREUTH,FED REP GER
来源
PHYSICAL REVIEW B | 1977年 / 16卷 / 10期
关键词
D O I
10.1103/PhysRevB.16.4480
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4480 / 4490
页数:11
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