EVALUATION OF CONCENTRATION-DEPTH PROFILES BY SPUTTERING IN SIMS AND AES - COMMENT

被引：21

作者：

SHIMIZU, R

机构：

[1] Department of Applied Physics, Osaka University Suita, Osaka

来源：

APPLIED PHYSICS | 1979年 / 18卷 / 04期

关键词：

79.20;

D O I：

10.1007/BF00899698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The statistics of the sputtering process, which has been used to explain sputterbroadening effect due to surface roughness, has been treated with conditional probabilities. This results in the relationship, {Mathematical expression}, instead of {Mathematical expression} derived by S. Hofmann [Appl. Phys. 9, 59 (1976)], where δz, z, and {Mathematical expression} are the depth resolution, sputtered depth and sputtering yield, respectively. © 1979 Springer-Verlag.

引用

页码：425 / 426

页数：2

共 12 条

[1] ANALYSIS OF MONOMOLECULAR LAYERS OF SOLIDS BY SECONDARY ION EMISSION [J].