DIRECT OBSERVATION OF A SILICON-SAPPHIRE HETEROEPITAXIAL INTERFACE BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY

被引：28

作者：

ABRAHAMS, MS

HUTCHISON, JL

BOOKER, GR

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 63卷 / 01期

关键词：

D O I：

10.1002/pssa.2210630150

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K3 / &

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[2]

ABRAHAMS MS, 1975, APPL PHYS LETT, V27, P324

[3]

BOYES ED, 1979, I PHYS C SER, V52

BURSILL, LA ;

WOOD, GJ .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 38 (06) :673-689

[5]

CULLEN CW, 1971, J CRYSTAL GROWTH, V9, P107

[6]

NOLDER R, 1965, T METALL SOC AIME, V233, P549

[7] THE THEORETICAL RESOLUTION LIMIT OF THE ELECTRON MICROSCOPE [J].

SCHERZER, O .