TRANSMISSION ELECTRON-MICROSCOPE STUDY OF THE FORMATION OF NI2SI AND NISI ON AMORPHOUS-SILICON

被引：12

作者：

ABOELFOTOH, MO

TAWANCY, HM

DHEURLE, FM

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 20期

关键词：

D O I：

10.1063/1.97799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1453 / 1454

页数：2

共 15 条

[1] TRANSMISSION ELECTRON-MICROSCOPE STUDY OF THE INITIAL-STAGE OF FORMATION OF PD2SI AND PT2SI [J].

ABOELFOTOH, MO ;

ALESSANDRINI, A ;

DHEURLE, FM .

APPLIED PHYSICS LETTERS, 1986, 49 (19) :1242-1244

[2]

BAGLIN JE, 1979, APPL PHYS LETT, V35, P285

[3] NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE [J].

CHEUNG, NW ;

CULBERTSON, RJ ;

FELDMAN, LC ;

SILVERMAN, PJ ;

WEST, KW ;

MAYER, JW .

PHYSICAL REVIEW LETTERS, 1980, 45 (02) :120-124

[4] FORMATION OF THIN-FILMS OF NISI - METASTABLE STRUCTURE, DIFFUSION MECHANISMS IN INTERMETALLIC COMPOUNDS [J].

DHEURLE, F ;

PETERSSON, CS ;

BAGLIN, JEE ;

LAPLACA, SJ ;

WONG, CY .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) :4208-4218

[5]

Koster U., 1981, TOP APPL PHYS, P225

[6] INFLUENCE OF THIN SIO2 INTERLAYERS ON CHEMICAL-REACTION AND MICROSTRUCTURE AT THE NI/SI(111) INTERFACE [J].

LIEHR, M ;

LEFAKIS, H ;

LEGOUES, FK ;

RUBLOFF, GW .

PHYSICAL REVIEW B, 1986, 33 (08) :5517-5525

[7] LOW-TEMPERATURE FORMATION OF NISI2 FROM EVAPORATED SILICON [J].

LIEN, CD ;

NICOLET, MA ;

LAU, SS .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (01) :123-128

[8] CHEMICAL BONDING AND REACTIONS AT THE PD-SI INTERFACE [J].

RUBLOFF, GW ;

HO, PS ;

FREEOUF, JF ;

LEWIS, JE .

PHYSICAL REVIEW B, 1981, 23 (08) :4183-4196

[9] STRUCTURAL STUDIES OF THIN NICKEL FILMS ON SILICON SURFACES [J].

SCHAFFER, WJ ;

BENE, RW ;

WALSER, RM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1325-1331

[10]

THOMPSON RD, 1985, PHYS REV B, V33, P5210

← 1 2 →