RESONANT RAMAN-SCATTERING IN AS2S3 AMORPHOUS THIN-FILMS

被引：4

作者：

RAZZETTI, C ^{[1
]}

LOTTICI, PP ^{[1
]}

机构：

[1] CNR,NAZL STRUTTURA MAT GRP,PARMA,ITALY

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1978年 / 87卷 / 02期

关键词：

D O I：

10.1002/pssb.2220870209

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The RRS cross‐section and the optical constants are investigated in amorphous As2S3 thin films. The results indicate that the cross‐section relative to the 350 cm−1 band is simply related to the imaginary (dissipative, or resonant) part of the dielectric susceptibility. Also an enhancement is found of the width of the 350 cm−1 band, which seems to diverge with increasing exciting energy. An absorption–emission picture of the RRS process could account for the observed results. Copyright © 1978 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：479 / 483

页数：5

共 14 条

[1] ABELES F, 1971, PHYSICS THIN FILMS
[2] Born M., 1975, PRINCIPLES OPTICS, VFifth
[3] DICHTBURN FRS, 1963, LIGHT
[4] KLEIN MV, 1973, PHYS REV B, V8, P919, DOI 10.1103/PhysRevB.8.919
[5] KOBLISKA RJ, 1972, SOLID STATE COMMUN, V10, P231
[6] ABSORPTION EDGE OF AMORPHOUS AS2S3
KOSEK, F
TAUC, J
[J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1970, 20 (01) : 94 - +
[7] LOTTICI PP, UNPUBLISHED
[8] THEORY OF RESONANCE RAMAN EFFECT IN CRYSTALS
LOUDON, R
[J]. JOURNAL DE PHYSIQUE, 1965, 26 (11): : 677 - &
[9] MARKOV YF, 1972, SOVIET PHYS SOLID ST, V14, P1063
[10] MARTIN RM, 1975, LIGHT SCATTERING SOL, V8, P79

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