HEAVY-ION TRACK STRUCTURE IN SILICON

被引：36

作者：

HAMM, RN

TURNER, JE

WRIGHT, HA

RITCHIE, RH

机构：

[1] Health and Safety Research Division, Oak Ridge National Laboratory, Oak Ridge

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1979年 / 26卷 / 06期

关键词：

D O I：

10.1109/TNS.1979.4330246

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：4892 / 4895

页数：4

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