INVESTIGATION OF LO PHONON EMISSION BY HOT HOLES AND THE EFFECTIVE MASS FOR HOLE TUNNELING IN GAAS (ALGA)AS SINGLE BARRIER STRUCTURES

被引：4

作者：

ALIKACEM, M ^{[1
]}

MAUDE, DK ^{[1
]}

HENINI, M ^{[1
]}

EAVES, L ^{[1
]}

HILL, G ^{[1
]}

PATE, MA ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oscillatory structure in the low temperature current-voltage characteristics of Be-doped p-type GaAs/(AlGa)As/GaAs single barrier tunnelling devices is observed. The oscillations have a period DELTA-V = 39 mV, close to HBAR-omega(L)/e, where HBAR-omega(L) is the LO phonon energy in GaAs. They result from energy relaxation of hot holes injected through the tunnel barrier. The sheet density in the hole accumulation layer adjacent to the tunnel barrier is obtained from the magneto-oscillations in I(V) for magnetic field B parallel-to J. This allows us to calculate the hole effective mass for tunnelling.

引用

页码：B446 / B449

页数：4

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