METAL THIN INSULATOR SILICON SCHOTTKY DIODES WITH PLASMA DEPOSITED SILICON-NITRIDE INTERFACIAL LAYER

被引：6

作者：

KOLNIK, J ^{[1
]}

IVANCO, J ^{[1
]}

OZVOLD, M ^{[1
]}

机构：

[1] SLOVAK ACAD SCI, INST PHYS, CS-84228 BRATISLAVA, CZECHOSLOVAKIA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1992年 / 130卷 / 01期

关键词：

D O I：

10.1002/pssa.2211300129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical characteristics of Schottky diodes with thin plasma deposited silicon nitride interfacial layers, using W and Ti on both, p- and n-type substrates and Ni on n-type substrates are investigated. For the first time Schottky MIS diodes with remote plasma deposited silicon nitride interfacial layer are reported. The Schottky barrier value change vs. nitride thicknesses is explained to be due to the reduction of the metal-semiconductor interaction and passivation of surface states.

引用

页码：245 / 251

页数：7

共 20 条

[1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[2]

CARD HC, 1971, J PHYS D, V4, P589

[3]

CERVINKA O, 1982, ORGANICKA CHEM

[4] CHARACTERIZATION OF SILICON-OXYNITRIDE FILMS DEPOSITED BY PLASMA-ENHANCED CVD [J].

CLAASSEN, WAP ;

VANDERPOL, HAJT ;

GOEMANS, AH ;

KUIPER, AET .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) :1458-1464

[5] EVALUATION OF THE INTERFACE STATE ENERGY-DISTRIBUTION FROM SCHOTTKY IV CHARACTERISTICS [J].

HORVATH, ZJ .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) :976-979

[6]

Ivanco J., IN PRESS

[7] THE INFLUENCE OF INVERSION SURFACE-LAYERS ON THE EVALUATION OF THE INTERFACE STATE ENERGY-DISTRIBUTION FROM SCHOTTKY-DIODE I-U CHARACTERISTICS [J].

KOLNIK, J ;

OZVOLD, M .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1990, 122 (02) :583-588

[8] PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION - DIFFERENCES BETWEEN DIRECT AND REMOTE PLASMA EXCITATION [J].

LUCOVSKY, G ;

TSU, DV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :2231-2238

[9] THERMAL-STABILITY OF MOLYBDENUM-SILICON NITRIDE-SILICON SCHOTTKY DIODES [J].

PARK, H ;

HELMS, CR .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :3149-3153

[10]

Rhoderick E.H., 1978, METAL SEMICONDUCTORS

← 1 2 →