FORMATION OF COPPER INDIUM DISELENIDE BY ELECTRODEPOSITION

被引:75
作者
THOUIN, L
MASSACCESI, S
SANCHEZ, S
VEDEL, J
机构
[1] Laboratoire d'Electrochimie Analytique et Appliquée, Unité associée au CNRS, ENSCP, 75005 Paris
来源
JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1994年 / 374卷 / 1-2期
关键词
D O I
10.1016/0022-0728(94)03352-8
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The electrodeposition of copper indium diselenide has been studied in the presence of an excess of In(III) ions by voltammetric methods, X-ray diffraction analysis and chemical analysis of the deposits. It is shown that the presence of In(III) in the solution favours the reduction of Se(IV) to Se(II-) via the formation of CuInSe2. Two indium codeposition processes are observed. The first involves the formation of CuInSe2 + Cu2Se or CuInSe2 + In2Se3, depending on the ratio alpha of the Se(IV) flux to the Cu(II) flux. It corresponds to an easier reduction of CuSe into Cu2Se and Se(II-). The second codeposition process results in a mixture of Cu + CuInSe2. It corresponds to an easier reduction of Cu2Se into Cu and Se(II-). The phases obtained under various conditions of potential and flux ratio are given.
引用
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页码:81 / 88
页数:8
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