METALLURGICAL OPTIMIZATION FOR OHMIC CONTACTS TO INP USING CONVENTIONAL METALLIZATION SCHEMES

被引：16

作者：

CLAUSEN, T

LEISTIKO, O

机构：

[1] Microelectronics Centre, Technical University of Denmark

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 18卷 / 04期

关键词：

OHMIC CONTACTS TO N-INP AND P-INP; MULTILAYER METALLIZATION; RAPID THERMAL PROCESSING; TERNARY PHASE DIAGRAMS;

D O I：

10.1016/0167-9317(92)90131-A

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conventional Au-based metallization schemes for both n-InP (AuGeNi) and p-InP (AuZnNi) were studied as a function of annealing temperature. For n+-InP, a value of the specific contact resistance as low as 5 x 10(-8) OMEGA cm2, has been obtained by optimizing the contact metallurgy structure. For p+-InP a similar very low value, 7 x 10(-6) OMEGA cm2, has been obtained. Metallurgical investigations have shown that very low specific contact resistance in Au-based metallization schemes can be obtained by growing a certain Au-In binary phase (epsilon-phase; Au3In), thus maximizing the amount of P at the metal-InP surface for barrier-lowering metal-phosphide formations.

引用

页码：305 / 325

页数：21

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