POLARIZATION AND WAVELENGTH DEPENDENCE OF METAL-SEMICONDUCTOR-METAL PHOTODETECTOR RESPONSE

被引:16
作者
KUTA, JJ [1 ]
VANDRIEL, HM [1 ]
LANDHEER, D [1 ]
ADAMS, JA [1 ]
机构
[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ON,CANADA
关键词
D O I
10.1063/1.111544
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photocurrent and transmission studies for,543<lambda<1523 nm of metal-semiconductor-metal (MSM) photodetectors on semi-insulating GaAs substrates demonstrate a polarization and wavelength dependence of the coupling of light into the metal electrodes. Devices with electrode periods of 400 and 800 MI were investigated and differences as large as 85% in efficiency between orthogonal polarizations were measured for the 400 MI devices. Modeling of the energy transmission through lamellar periodic structures using a Greens function formalism and incorporating dispersion of the substrate dielectric constant produces semiquantitative agreement with the measurements. Suggestions for future MSM photodetector design are discussed.
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收藏
页码:140 / 142
页数:3
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