CAPACITANCE OF POTENTIAL BARRIERS IN TRIGONAL SELENIUM SINGLE-CRYSTALS

被引:1
作者
ANDERSON, WW [1 ]
机构
[1] OHIO STATE UNIV,DEPT ELECT ENGN,COLUMBUS,OH
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 19卷 / 02期
关键词
D O I
10.1002/pssa.2210190264
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K193 / K196
页数:4
相关论文
共 7 条
[1]   FREQUENCY DEPENDENCE OF CONDUCTIVITY IN MONOCRYSTALLINE SELENIUM [J].
BARBOT, J ;
BOUAT, J ;
LAUNAY, A ;
THUILLIER, JC .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 7 (01) :113-+
[2]  
HELESKIVI J, 1969, VALTION TEKN TUTKIMU
[3]   FREQUENCY DEPENDANCE OF CONDUCTIVITY IN TRIGONAL SELENIUM SINGLE CRYSTALS [J].
LEMERCIER, C .
SOLID STATE COMMUNICATIONS, 1971, 9 (16) :1365-+
[4]  
LEMERCIER C, 1971, CONDUCTION LOW MOBIL
[5]   UBER DEN ELEKTRISCHEN LEITUNGSMECHANISMUS VON HEXAGONALEN SELEN-EINKRISTALLEN [J].
STUKE, J .
PHYSICA STATUS SOLIDI, 1964, 6 (02) :441-460
[6]  
STUKE J, 1965, RECENT ADV SELENIUM
[7]  
VOLGER J, 1960, PROGR SEMICOND, V4, P208