EXPERIMENTAL-DETERMINATION OF FINITE INVERSION LAYER THICKNESS IN THIN GATE OXIDE MOSFETS

被引:19
作者
TORIUMI, A [1 ]
YOSHIMI, M [1 ]
IWASE, M [1 ]
TANIGUCHI, K [1 ]
HAMAGUCHI, C [1 ]
机构
[1] OSAKA UNIV,DEPT ELECTR,SUITA,OSAKA 565,JAPAN
关键词
D O I
10.1016/0039-6028(86)90988-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:363 / 369
页数:7
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[2]   SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J].
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PHYSICAL REVIEW B, 1972, 5 (12) :4891-&
[3]  
SU HQ, 1985, IEEE T ELECTRON DEV, V32, P559