TRANSITION-METAL DOPING OF LP-MOCVD-GROWN INP

被引：3

作者：

WOLF, T

KROST, A

BIMBERG, D

REIER, F

HARDE, P

WINTERFELD, J

SCHUMANN, H

机构：

[1] HEINRICH HERTZ INST NACHRICHTENTECH BERLIN GMBH,W-1000 BERLIN 10,GERMANY

[2] TECH UNIV BERLIN,INST ANORGAN & ANALYT CHEM,W-1000 BERLIN 12,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90490-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of high-resistivity InP:Fe by LP-MOCVD is studied. The semi-insulating character of Fe-doped InP was found to vanish in contact with a p+-InP:Zn substrate. Ti-doping of InP is proposed as an alternative for the fabrication of semi-insulating material. Secondary ion mass spectroscopy is used to study the incorporation behavior of titanium in LP-MOCVD grown InP as a function of growth parameters. The optimum growth conditions to achieve abrupt titanium doping profiles are presented. In addition, first results on doping of InP with a 4d transition metal impurity are reported. The MOCVD growth of Zr-doped InP has been carried out using dimethylzircocene as organometallic source material.

引用

页码：381 / 385

页数：5

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