TIME-DEPENDENCE OF CURRENT AT HIGH ELECTRIC-FIELDS IN ALXGA1-XAS-GAAS HETEROJUNCTION LAYERS

被引：10

作者：

KEEVER, M ^{[1
]}

DRUMMOND, T ^{[1
]}

HESS, K ^{[1
]}

MORKOC, H ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 02期

关键词：

D O I：

10.1049/el:19810067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：93 / 94

页数：2

共 5 条

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DATTA, S ;

HUNSINGER, BJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) :475-479

[2] MONTE-CARLO SIMULATION OF REAL-SPACE ELECTRON-TRANSFER IN GAAS-ALGAAS HETEROSTRUCTURES [J].

GLISSON, TH ;

HAUSER, JR ;

LITTLEJOHN, MA ;

HESS, K ;

STREETMAN, BG ;

SHICHIJO, H .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5445-5449

[3] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER [J].

HESS, K ;

MORKOC, H ;

SHICHIJO, H ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1979, 35 (06) :469-471

[4]

KEEVER M, UNPUBLISHED

[5] REAL-SPACE ELECTRON-TRANSFER BY THERMIONIC EMISSION IN GAAS-ALXGA1-XAS HETEROSTRUCTURES - ANALYTICAL MODEL FOR LARGE LAYER WIDTHS [J].

SHICHIJO, H ;

HESS, K ;

STREETMAN, BG .

SOLID-STATE ELECTRONICS, 1980, 23 (08) :817-822

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