ELECTROLESS DEPOSITION ON COPPER SUBSTRATES AND CHARACTERIZATION OF THIN-FILMS OF COPPER(I) SELENIDE

被引：55

作者：

HARAM, SK ^{[1
]}

SANTHANAM, KSV ^{[1
]}

NEUMANNSPALLART, M ^{[1
]}

LEVYCLEMENT, C ^{[1
]}

机构：

[1] CNRS,PHYS SOLIDES LAB,F-92195 MEUDON,FRANCE

来源：

MATERIALS RESEARCH BULLETIN | 1992年 / 27卷 / 10期

关键词：

COPPER; SELENIDES;

D O I：

10.1016/0025-5408(92)90226-P

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cuprous selenide films are prepared by reacting oxide free copper metal with selenous acid at room temperature (22-degrees-C). The formation of Cu(I) oxide is avoided by degassing the bath with argon. From the X-ray diffractograms (XRD) and electron probe microanalysis (EPMA) of such films it can be concluded that copper deficient, orthorhombic Cu(I) selenide is formed.

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页码：1185 / 1191

页数：7

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